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Comset Semiconductors |
BD244 – A – B – C
SILICON PNP POWER TRANSISTORS
The BD244 series are PNP power transistors in a TO-220 envelope.
They are intended for use in medium power linear and switching applications.
The complementary is BD243, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IB= 0mA)
VCBO
VEBO
IC
ICM
IB
PT
TJ
TS
Collector-Base Voltage (IE= 0mA)
www.DataSheet.net/
Emitter-Base Voltage(IC= 0mA)
Collector Current
Collector Current-Peak
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
RthJC
RthJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
BD244
BD244A
BD244B
BD244C
BD244
BD244A
BD244B
BD244C
TC = 25°
C
-45
-60
-80
-100
-45
-60
-80
-100
-5.0
-6
-10
-2
65
150
-65 to +150
Unit
V
V
V
A
A
W
°C
Value
1.92
62.5
Unit
°C / W
°C / W
25/09/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
BD244 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICES
ICEO
IEBO
VCEO
hFE
VCE(SAT)
VBE
VCE = -45 V , VBE = 0 BD244
Collector- Emitter Cut- VCE = -60 V , VBE = 0 BD244A
off Current
VCE = -80 V , VBE = 0 BD244B
-
- -0.4 mA
VCE = -100 V , VBE = 0 BD244C
Collector Cut-off
Current
VCE = -30 V , IB = 0
VCE = -60 V , IB = 0
BD244
BD244A
BD244B
BD244C
-
- -0.7 mA
Emitter Cut-off Current VE B = -5 V , IC = 0
BD244
--
-45 -
-1 mA
-
Collector- Emitter
Breakdown Voltage
(*)
IC = -30 mA, IB = 0
www.DataSheet.net/
BD244A
BD244B
BD244C
-60
-80
-100
-
-
-
-
-
V
-
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
VCE = -4 V, IC = -0.3 A
VCE = -4 V, I C= -3 A
IC = -6 A, IB = -1 A
30 -
15 -
-
-
-
- - -1 V
Base-Emitter
Voltage(*)
VCE = -4 V, IC = -6 A
- - -1.6 V
25/09/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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