파트넘버.co.kr BD139 데이터시트 PDF


BD139 반도체 회로 부품 판매점

(BD135 - BD139) SILICON PLANAR EPITAXIAL POWER TRANSISTORS



Comset Semiconductors 로고
Comset Semiconductors
BD139 데이터시트, 핀배열, 회로
NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
IB
PT
TJ
TStg
Ratings
Collector-Base Voltage (IE= 0)
Collector-Emitter Voltage (IB= 0)
www.DataSheet.net/
Collector-Emitter Voltage (RBE= 1 kΩ)
Emitter-Base Voltage (IC= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
IC
ICM
IB
Tmb = 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BD139 데이터시트, 핀배열, 회로
NPN BD135 – BD137 – BD139
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BD135
- - 0,1
IE=0 , VCB= 30 V
BD137
- - 0,1
ICBO
Collector cut-off
current
IE=0 ,VCB = 30V
Tj= 125°C
BD139
BD135
BD137
BD139
-
-
-
-
0,1
10
µA
- - 10
- - 10
IEBO
VCEO(SUS)
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (1)
IC=0, VEB=5 V
IB=0 , IC=30 mA
BD135
BD137
BD139
- - 10 µA
45 -
-
60 - - V
80 -
-
VCE(SAT)
Collector-Emitter
saturation Voltage (1)
IC=0.5 A,IB=50 mA
- - 0,5 V
VCE=2 V, IC=5 mA
25 -
-
BDxxx
40 - 250
hFE
DC Current Gain (1) VCE=2 V, IC=150 mA BDxxx -10 63
- 160
BDxxx -16 100 - 250
www.DataSheet.net/
VCE=2 V, IC=500 mA
25 -
-
VBE
Base-Emitter
Voltage(1)
VCE=2 V, IC=500 mA
- - 1V
fT
Transition frequency VCE=5 V, IC=50 mA , f= 35 MHz
- 250 - MHz
1. Measured under pulse conditions :tP <300µs, δ <2%.
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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제조업체: Comset Semiconductors

( comsets )

BD139 transistor

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