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Comset Semiconductors |
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
GENERAL PURPOSE TRANSISTORS
They are silicon planar epitaxial NPN transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
PNP complements are the BC160 – BC161.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
IE = 0
Collector-Emitter Voltage
IB = 0
Emitter-Base Voltage
IC = 0
Collector Current
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IB Base Current
Ptot
@ Tcase= < 45°
@ Tamb= < 45°
TJ Junction Temperature
TStg Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-amb
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
80
100
40
60
7
1
0.1
3.7
0.65
175
-55 to +175
Value
35
200
Unit
V
V
V
A
A
W
°C
°C
Unit
K/ W
K/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICES
Collector – Cutoff Current
IE= 0
VCES= 60 V
IE= 0, VCES= 60 V
Tamb = 150°c
BC140
BC141
BC140
BC141
-
-
- 100 nA
- 100 µA
VCB0
Collector – Base
Breakdown Voltage
IC = 100 µA
IE= 0
BC140 80
BC141 100
-
-
-
-
V
VCE0 (*)
Collector – Emitter
Breakdown Voltage
IC = 30 mA
IB= 0
BC140 40
BC141 60
-
-
-
-
V
VEB0
Emitter – Base
Breakdown Voltage
IE= 100 µA
IC= 0
BC140
BC141
7
--
V
VCE(SAT) (*) Collector-Emitter
saturation Voltage
IC= 100 mA , IB= 10 mA
IC= 500 mA , IB= 50 mA
I = 1 A, I = 100 mAC
B
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- 0.1
- 0.35
- 0.6 1
V
VBE (*) Base-Emitter Voltage
IC= 1 A , VCE= 1V
1.25 1.8
IC= 100 µA , VCE= 1
V
Gr 10
Gr 16
-
-
-
75 -
40 -
90 -
hFE (*)
DC Current Gain
IC= 100 mA , VCE= 1
V
Gr 10
Gr 16
40 140 250
63 100 160
100 160 250
-
IC= 1 A , VCE= 1 V Gr 10
-
-
26 -
20 -
Gr 16 - 30 -
fT
CCBO
Transition Frequency
Collector – base
Capacitance
IC= 50 mA , VCE= 10 V
IE= 0 ;VCB= 10V
f = 1 MHZ
50 - - MHZ
- 12 25 pF
toff Turn-off times
IC=100 mA
IB1=-IB2=5 mA
- - 850 ns
ton Turn-on times
IC=100 mA
IB1=1 mA
- - 250 ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
16/10/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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