파트넘버.co.kr BDY27 데이터시트 PDF


BDY27 반도체 회로 부품 판매점

(BDY26 - BDY28) NPN SILICON TRANSISTORS



Comset Semiconductor 로고
Comset Semiconductor
BDY27 데이터시트, 핀배열, 회로
BDY26 – 183T2
BDY27 – 184T2
BDY28 – 185T2
NPN SILICON TRANSISTORS, DIFFUSED MESA.
They are NPN transistors mounted in Jedec TO-3.
LF Large Signal Power Amplification.
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
IB
PTOT
TJ
TS
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
www.DataSheet.net/
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
@ TC = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
180
200
250
300
400
500
10
6
3
87.5
200
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
2
Unit
°C/W
24/09/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDY27 데이터시트, 핀배열, 회로
BDY26 – 183T2
BDY27 – 184T2
BDY28 – 185T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
VCEO(BR)
V(BR)CBO
ICEO
IEBO
ICES
VCE(SAT)
VBE(SAT)
hFE
fT
td + tr
ts + tf
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
DC Current Gain
Transition Frequency
Turn-on time
Turn-off time
BDY26, 183T2
180 - -
IC=50 mA
IB=0
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
200
250
250
-
-
-
-
-
-
V
BDY28C, 185T2C 220 - -
BDY26, 183T2
300 - -
IC=3 mA
BDY27, 184T2
400 - -
V
BDY28, 185T2
500 - -
VCE=180 V BDY26
VCE=200 V BDY27
VCE=250 V BDY28
BDY26, 183T2www.DataSheet.net/
VEB=10 V
BDY27, 184T2
BDY28, 185T2
VCE=250 V
VBE=0 V
BDY26, 183T2
VCE=300 V
VBE=0 V
VCE=400 V
VBE=0 V
BDY27, 184T2
BDY28, 185T2
IC=2.0 A
IB=0.25 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
--
- - 1.0 mA
--
- - 1.0 mA
--
- - 1.0 mA
--
--
- - 0.6 V
--
IC=2.0 A
IB=0.25 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
--
- - 1.2 V
--
VCE=4 V
IC=1 A
A
B
C
VCE=4 V
IC=2 A
A
B
C
VCE= 15 V, IC= 0.5 A, f= 10 MHz
IC= 5 A, IB= 1 A
IC= 5 A, IB1= 1 A, IB2= -0.5 A
- 55 -
- 65 -
- 90 -
15 20 45
-
30 45 90
75 82 180
10 - - MHz
- 0.3 0.5 µs
- 1.5 2.0 µs
(*) Pulse Width 300 µs, Duty Cycle 2%
24/09/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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BDY27 transistor

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