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Comset Semiconductor |
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ
TStg
Ratings
Collector-Emitter Voltage
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Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
60
90
140
60
100
200
10
6
3
87.5
200
-65 to +200
Unit
V
V
V
A
A
Watts
°C
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(BR)
Collector-Emitter
Breakdown Voltage (*)
IC=50 mA, IB=0
V(BR)CBO
ICEO
IEBO
Collector-Base Breakdown
Voltage (*)
IC=3 mA
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Collector-Emitter Cutoff
Current
VCE=60 V
VCE=90 V
VCE=140 V
Emitter-Base Cutoff Current VEB=10 V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
VCE=60 V
VBE=0 V
BDY23, 180T2
ICES
Collector-Emitter Cutoff
Current
VCE=100 V
VBE=0 V
BDY24, 181T2
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
VCE=180 V
VBE=0 V
IC=2.0 A, IB=0.25 A
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Min Typ Mx Unit
60 -
-
90 - - V
140 -
-
60 -
-
100 - - V
200 -
-
--
- - 1.0 mA
--
- - 1.0 mA
- - 0.5
- - 1.0 mA
- - 1.0
- -1
- - 0.6 V
- - 0.6
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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