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PDF 2SC4095 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4095 | |
| Descripción | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |
| Fabricantes | NEC | |
| Logotipo |  |
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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
• S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
5° 5°
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 35
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25 C)
V
V
V
mA
mW
C
C
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
UNIT
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
TEST CONDITIONS
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
1.0 A VCB = 10 V, IE = 0
1.0 A VEB = 1 V, IC = 0
DC Current Gain
hFE 50 100 250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10 GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance
Insertion Power Gain
Cre 0.25 0.8
S21e2
7.5
9.5
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
12
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
© 1987
1 page  
2SC4095
RECOMMENDED SOLDERING CONDTITIONS
The following conditions (see table below) must be met then soldering this product. Please consult with our sales
offices in case other soldering process is used, or in case soldering is done under different contions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document “SMT MANUAL” (IEI-1207).
2SC4095
Soldering process
Soldering conditions
Infrared ray reflow
VPS
Wave soldering
Partial heating method
Peak package’s surface temperature: 230 C or below,
Reflow time:
30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit*: None
Peak package’s surface temperature: 215 C or below,
Reflow time:
40 seconds or below (200 C or higher),
Number of reflow process: 1, Exposure limit*: None
Solder temperature:
Flow time:
Number of reflow process:
260 C or below,
10 seconds or below,
1, Exposure limit*: None
Terminal temperature:
Flow time:
Exposure limit*:
300 C or below,
3 seconds or below,
None
*: Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for “Partial heating method”.
Symbol
IR30-00-1
VP15-00-1
WS60-00-1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC4095.PDF ] | |
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