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2SC4093-T1 반도체 회로 부품 판매점

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD



NEC 로고
NEC
2SC4093-T1 데이터시트, 핀배열, 회로
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gains
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
V
V
V
mA
mW
C
C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
0.3
1.5
+0.2
0.1
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
© 1991


2SC4093-T1 데이터시트, 핀배열, 회로
2SC4093
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 50 120
Gain Bandwidth Product
fT
7.0
Feed-Back Capacitance
Insertion Power Gain
Cre
S21e2
11
0.6
13
Noise Figure
NF 1.1
MAX.
1.0
1.0
250
0.95
2.0
UNIT
A
A
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 10 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Classification of hFE
Rank
R26/RBF *
R27/RBG *
R28/RBH *
Marking
R26
R27
R28
Range
50 to 100
80 to 160
125 to 250
hEF Test Condtitions: VCE = 10 V, IC = 20 mA
* Old Specification / New Specification
2




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2SC4093-T1 transistor

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2SC4093-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD - NEC



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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD - NEC