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Sanyo Semicon Device |
Ordering number:EN2960
NPN Triple Diffused Planar Silicon Transistor
2SC4002
High-Voltage Driver Applications
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
Package Dimensions
unit:mm
2003B
[2SC4002]
5.0
4.0 4.0
0.45
0.5
0.45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
fT VCE=30V, IC=10mA
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
* : The 2SC4002 is classified by 50mA hFE as follows : 60 D 120 100 E
200
1.3
1.3
0.44
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
Ratings
400
400
5
200
400
600
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
60*
70
max
0.1
0.1
200*
0.6
1.0
Unit
µA
µA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/6139MO, TS No.2960–1/3
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Switching Time Test Circuit
2SC4002
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Cre
ton
toff
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=30V, f=1MHz
VCB=30V, f=1MHz
See specified test circuit.
See specified test circuit.
Ratings
min typ
400
400
5
4
3
0.25
5.0
max
Unit
V
V
V
pF
pF
µs
µs
No.2960–2/3
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