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ROHM Semiconductor |
-100mA/-50V Digital transistors(with built-in resistors)
DTA014EM / DTA014EEB / DTA014EUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions (Unit : mm)
VMT3
EMT3F
Abbreviated symbol : 30
(3)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Applications
Inverter, Interface, Driver
Packaging specifications
Package
Type
Packaging Type
Code
Basic ordering
unit (pieces)
DTA014EM
DTA014EEB
DTA014EUB
UMT3F
(1) (2)
Abbreviated symbol : 30
2.0
0.32
(3)
0.9
VMT3
Taping
T2L
8000
○
-
-
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 30
www.DataSheet.co.kr
EMT3F
Taping
TL
UMT3F
Taping
TL
3000
3000
Equivalent circuit
R1
IN
R2
OUT
GND(+)
--
○-
-○
IN OUT
GND(+)
R1=R2=10kΩ
Absolute maximum (Ta=25C)
Parameter
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
Symbol
VCC
VIN
IC(max)
IO
PD
Tj
Tstg
Limits(DTA014E□)
M EB
UB
-50
-40
10
-100
-50
150 200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
C
C
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
DTA014EM / DTA014EEB / DTA014EUB
Electrical characteristics (Ta=25C)
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
Transition frequency *
fT
Input resistance
Resistance ratio
* Characteristics of built-in transistor
R1
R2/R1
Min.
-
-2.6
-
-
-
35
-
7
0.8
Typ.
-
-
-0.07
-
-
-
250
10
1.0
Max.
-0.8
-
-0.15
-0.88
-500
-
-
13
1.2
Unit
V
V
V
mA
nA
-
MHz
kΩ
-
Test Conditions
VCC=-5V / IO=-0.1mA
VO=-0.3V / IO=-5mA
IO=-5mA / II=-0.5mA
VI=-5V
VCC=-50V / VI=0V
VO=-10V / IO=-5mA
VCE=-10V /IE=5mA
f=100MHz
Data Sheet
Electrical characteristics curves
-100
VO=-0.3V
-10
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
-1
-0.1
-0.1
-1 -10
OUTPUT CURRENT : IO (mA)
-100
-10
Ta=125ºC
Ta=75ºC
-1 Ta=25ºC
Ta=-40ºC
-0.1
VCC=-5V
-0.01
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-0.001
0
-0.5 -1 -1.5 -2 -2.5
INPUT VOLTAGE : VI(off) (V)
-3
Fig.1 Input Voltage vs. Output Current (ON characteristics) Fig.2 Input Voltage vs. Output Current (OFF characteristics)
1000
Ta=125℃
Ta=75℃
100 Ta=25℃
Ta=-40℃
10
VO=-10V
1
-0.1
-1 -10
OUTPUT CURRENT : IO (mA)
-100
Fig.3 DC Current Gain vs. Output Current
-1
IO/II=10
-0.1
-0.01
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-40℃
-0.001
-0.1
-1 -10 -100
OUTPUT CURRNET : IO (mA)
Fig.4 Output Voltage vs. Output Current
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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