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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD950F/952F/954F/956F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA
·Complement to Type BD949F/951F/953F/955F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD950F
-60
VCBO
Collector-Base Voltage
BD952F
BD954F
-80
-100
V
BD956F
-120
BD950F
-60
VCEO
BD952F
Collector-Emitter Voltage
BD954F
-80
-100
www.DataSheet.co.kr
V
BD956F
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-8
22
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
8.12 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD950F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD952F
BD954F
IC= -100mA ; IB= 0
BD956F
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IC= -2A; VCE= -4V
VCB= VCBOmax; IE= 0
VCB= 1/2VCBOmax; IE= 0,TJ=150℃
VCE= 1/2VCEOmax; IB= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
hFE-2
DC Current Gain
DC Current Gain
IC= -500mA ; VCE= -4V
www.DataSheet.co.kr
IC= -2A ; VCE= -4V
fT Current-Gain—Bandwidth Product IC= -500mA ; VCE= -4V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-1.0 V
-1.4 V
-0.05
-1
mA
-0.1 mA
-0.2 mA
40
20
3 MHz
0.3 μs
1.5 μs
isc Website:www.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.net/
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