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PDF GB75DA120UP Data sheet ( Hoja de datos )
| Número de pieza | GB75DA120UP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay Siliconix | |
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GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 75 A, 25 °C
1200 V
75 A at 95 °C
3.3 V
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
131
89
200
200
59
39
± 20
658
369
240
135
2500
UNITS
V
A
V
W
V
Document Number: 93011 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
GB75DA120UP
Vishay Semiconductors
14
12
Eon
10
8
Eoff
6
4
2
0
0 10 20 30 40 50
10 000
RG (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 75 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
1000
100
td(on)
td(off)
tf
tr
10
0
10 20 30 40 50
RG (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
1
250
230
210
190
170
150
130
110
90
70
100
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/µs)
Fig. 13 - Typical trr diode vs. dIF/dt
VRR = 200 V, IF = 50 A
40
35
30 TJ = 125 °C
25
20
15 TJ = 25 °C
10
5
0
100
dIF/dt (A/µs)
Fig. 14 - Typical Irr diode vs. dIF/dt
VRR = 200 V, IF = 50 A
1000
0.1
0.01
0.001
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (t1)
Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
Document Number: 93011 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GB75DA120UP.PDF ] | |
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