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Panasonic Semiconductor |
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Transistors
2SD0965 (2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
40
20
7
5
8
750
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
0.1 µA
Forward current transfer ratio
hFE1 * VCE = 2 V, IC = 0.5 A
230 600
hFE2 VCE = 2 V, IC = 1 A
150
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.1 A
0.28 1.00
V
Transition frequency
fT VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 20 V, IE = 0, f = 1 MHz
26 50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1 230 to 380 340 to 600
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00200BED
1
www.DataSheet4U.net
2SD0965
PC Ta
1 000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
2.4
Ta = 25°C
2.0 IB = 7 mA
6 mA
1.6
5 mA
4 mA
1.2
3 mA
0.8
2 mA
0.4 1 mA
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Collector-emitter voltage VCE (V)
IC VBE
6
VCE = 2 V
25°C
5
Ta = 75°C
−25°C
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
10 IC / IB = 30
1
Ta = 75°C
0.1 25°C
−25°C
0.01
0.001
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100 IC / IB = 30
10
25°C
1 Ta = −25°C
75°C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
hFE IC
600
VCE = 2 V
Ta = 25°C
500
Ta = 75°C
400
25°C
300
−25°C
200
100
0
0.01 0.1
1
Collector current IC (A)
10
fT IE
400
VCB = 6 V
Ta = 25°C
300
200
100
0
− 0.01
− 0.1
−1
Emitter current IE (A)
−10
Cob VCB
100
IE = 0
f = 1 MHz
Ta = 25°C
80
60
40
20
0
1 10 100
Collector-base voltage VCB (V)
Safe operation area
100 Single pulse
Ta = 25°C
10 ICP
IC
1
t = 10 ms
t=1s
0.1
0.01
0.1 1 10 100
Collector-emitter voltage VCE (V)
2 SJC00200BED
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