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PDF 2SD0874A Data sheet ( Hoja de datos )
| Número de pieza | 2SD0874A | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
Unit: mm
■ Features
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD0874 VCBO
2SD0874A
30
60
V
Collector-emitter voltage 2SD0874 VCEO
(Base open)
2SD0874A
25
50
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC 1 A
Peak collector current
ICP 1.5
A
Collector power dissipation *
PC 1 W
Junction temperature
Tj 150 °C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
3.0±0.15
45˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
• 2SD0874: Z
• 2SD0874A: Y
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SD0874 VCBO IC = 10 µA, IE = 0
30
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage
(Base open)
2SD0874 VCEO
2SD0874A
IC = 2 mA, IB = 0
25 V
50
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
85
50
0.1
340
0.2 0.4
0.85 1.2
200
20
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00197CED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD0874A.PDF ] | |
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