파트넘버.co.kr 2SD0874 데이터시트 PDF


2SD0874 반도체 회로 부품 판매점

Silicon NPN epitaxial planar type



Panasonic Semiconductor 로고
Panasonic Semiconductor
2SD0874 데이터시트, 핀배열, 회로
www.DataSheet4U.net
Transistors
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
Unit: mm
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD0874 VCBO
2SD0874A
30
60
V
Collector-emitter voltage 2SD0874 VCEO
(Base open)
2SD0874A
25
50
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC 1 A
Peak collector current
ICP 1.5
A
Collector power dissipation *
PC 1 W
Junction temperature
Tj 150 °C
Storage temperature
Tstg 55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
0.4±0.04
3.0±0.15
45˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
2SD0874: Z
2SD0874A: Y
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SD0874 VCBO IC = 10 µA, IE = 0
30
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage
(Base open)
2SD0874 VCEO
2SD0874A
IC = 2 mA, IB = 0
25 V
50
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
5
85
50
0.1
340
0.2 0.4
0.85 1.2
200
20
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00197CED
1


2SD0874 데이터시트, 핀배열, 회로
www.DataSheet4U.net
2SD0874, 2SD0874A
PC Ta
1.4
Copper plate at the collector
is more than 1 cm2 in area,
1.2 1.7 mm in thickness
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
1.50
Ta = 25°C
1.25 IB = 10 mA
9 mA
8 mA
1.00 7 mA
6 mA
0.75 5 mA
4 mA
0.50 3 mA
2 mA
0.25 1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
10 IC / IB = 10
1
Ta = 75°C
25°C
0.1 25°C
0.01
0.001
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100 IC / IB = 10
10
25°C
1 Ta = −25°C
75°C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
hFE IC
600
VCE = 10 V
500
400
300
Ta = 75°C
200
25°C
25°C
100
0
0.01 0.1
1
Collector current IC (A)
10
200 VCB = 10 V
Ta = 25°C
fT IE
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
Safe operation area
10 Single pulse
TC = 25°C
ICP
1
IC
0.1
t=1s
DC
0.01
0.1 1 10 100
Collector-emitter voltage VCE (V)
2 SJC00197CED




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2SD0874 transistor

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