(PDF) HP147TSW Datasheet - PNP SILICON TRANSISTOR

Número de pieza	HP147TSW
Descripción	PNP SILICON TRANSISTOR
Fabricantes	SHANTOU HUASHAN ELECTRONIC DEVICES
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No Preview Available ! www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. APPLICATIONS High DC Current Gain ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Junction Temperature PC Collector Dissipation Tc=25 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current DC IB Base Current 55~150 150 70W -100V -100V -5V -8A -0.5A PNP DARLINGTON TRANSISTOR HP147TSW TO-263 1 Base B 2 Collector C 3 Emitter, E ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ BVCEO(SUS) ICEO ICBO IEBO HFE 1 HFE 2 VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Vo ltage Deiay time tR Rise Time tS Storage Time tF Fall Time Max Unit Test Conditions IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-0.5A VCE=-4V, IC=-3A IC=-5A, IB=-10mA IC=-10A, IB=-40mA IC=-10A, IB=-40mA VCE=-4V,IC=-10A, Vcc=-30V,Ic=-5A IB1=-20mA IB2=20mA 1 page

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PDF HP147TSW Data sheet ( Hoja de datos )