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PDF CZD1182 Data sheet ( Hoja de datos )
| Número de pieza | CZD1182 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
CZD1182
PNP Silicon
General Purpose Transistor
FEATURES
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The CZD1182 is designed for medium power amplifier application
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
MARKING : 1182
(With Date Code)
MAX*IMUM RATINGS* TA=25OC unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulse,Pw=100mS
Collector Dissipation
Junction and Storage Temperature
6. 50Ć0. 15
5. 30Ć0. 10
C
TO-252
0. 51Ć0. 05
2. 30Ć0. 10
0. 51Ć0. 10 1. 20
0Ć0. 10
5
0. 80Ć0. 10
5
5
2. 30Ć0. 10
B
C
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
Symbol
VCBO
VCEO
VEBO
IC
IC
PC
TJ, Tstg
Value
-40
-32
-5
-2
-3
10
+150,-55~+150
Units
V
V
V
A
A
W
ć
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=-50µA, IE=0
-40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CEO Ic= -1mA,IB=0
V(BR)EBO IE= -50µA, IC=0
ICBO
VCB=-20V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-3V,IC=-500mA
VCE(sat) IC=-2000mA,IB=-200mA
fT VCE=-5V,Ic=500mA,f=100MHz
Cob VCB=-10V,f=1MHz
-32
-5
82
-500
100
50
V
V
-1 uA
-1 uA
390
-800 mV
MHz
pF
CLASSIFICATION OF hFE
Rank
PQR
Range
82 - 180
120 - 270
180 - 390
http://www.SeCoSGmbH.com
01-Jun-2006 Rev. A
Any changing of specification will not be informed individual
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| PDF Descargar | [ Datasheet CZD1182.PDF ] | |
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