파트넘버.co.kr BCP882 데이터시트 PDF


BCP882 반도체 회로 부품 판매점

Epitaxial Planar Transistor



SeCoS 로고
SeCoS
BCP882 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BCP882
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
wwwD.DeatsaSchereit4pUt.nieot n
The BCP882 is suited for the output stage of 1.5W
audio, voltage regulator, and relay driver.
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25oC
Symbol
VCBO
VCEO
VEBO
IC
PD
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
40
30
5
3
1.2
-55~+150
Units
V
V
V
A
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BV CEO
BVEBO
ICBO
Min
40
30
5
-
Emitter-Base Cutoff Current
Collector Saturation Voltage
IEBO
VCE(sat)
-
-
Base-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
VBE(sat)
hFE1
hFE2
fT
Cob
-
30
100
-
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max Unit Test Conditions
- V IC=100µA,IE=0
- V IC= 1mA,IB=0
- V IE= 10µA
1 uA VCB= 30V
1 uA VEB=3V
0.5 V IC=2A,IB=0.2A
2 V IC=2A,IB=0.2A
- VCE= 2 V, IC=20mA
500 VCE= 2 V, IC=1 A
- MHz VCE= 5 V, IC= 0.1A,f=100MHz
- pF VCB=10V, f=1MHz,IE=0
Classification of hFE
Rank
Range
Q
100~200
P
160~320
E
250~500
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2


BCP882 데이터시트, 핀배열, 회로
Elektronische Bauelemente
Characteristics Curve
BCP882
NPN Silicon
Epitaxial Planar Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2




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Epitaxial Planar Transistor - SeCoS