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Inchange Semiconductor |
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1011
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2344
APPLICATIONS
·High voltage switching ,
·Audio frequency power amplifier;
·100W output predriver applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-180
-160
-6
-1.5
-3.0
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE Base-emitter voltage
IC=-10mA ; VCE=-5V
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE DC current gain
IC=-0.3A ; VCE=-5V
fT Transition frequency
IC=-50mA ; VCE=-10V
Cob Output capacitance
IE=0; f=1MHz ; VCB=-10V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=-0.5A ;IB1=-IB2=-50mA
VCC=20V; RL=40Ω
hFE Classifications
DE
60-120 100-200
Product Specification
2SA1011
MIN TYP. MAX UNIT
-160
V
-180
V
-6 V
-0.5 V
-1.5 V
-10 μA
-10 μA
60 200
100 MHz
30 pF
0.29 μs
0.48 μs
0.19 μs
2
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