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KF17N50N 반도체 회로 부품 판매점

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



KEC 로고
KEC
KF17N50N 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS(Min.)= 500V, ID= 17A
Drain-Source ON Resistance :
RDS(ON)=0.35(Max.) @VGS =10V
Qg(typ.) =41nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS
VGSS
ID
IDP
EAS
EAR
500
30
17
45
870
22.5
dv/dt
4.5
223
PD
1.79
Tj 150
Tstg -55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
RthJC
RthJA
0.54
40
/W
/W
KF17N50N
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
D
G
Marking
1 KF17N50
N 801
2
S
www.DataSheet4U.net
2008. 10. 2
Revision No : 1
1 PRODUCT NAME
2 LOT NO
1/6


KF17N50N 데이터시트, 핀배열, 회로
KF17N50N
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=500V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=8.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=17A
VGS=10V
(Note4,5)
VDD=250V,
RG=25 ,
ID=17A
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=17A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=17A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 5.4mH, IAS=17A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 17A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
500 - - V
- 0.5 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 0.3 0.35
- 41 -
-9-
- 17 -
- 30 -
- 21 -
- 162 -
- 43 -
- 1630 -
- 244 -
- 22 -
nC
ns
pF
- - 17
A
- - 68
- 0.9 -
V
- 370 -
ns
- 4.8 -
C
2008. 10. 2
Revision No : 1
2/6




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