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SPI15N60CFD 반도체 회로 부품 판매점

CoolMOSTM Power Transistor



Infineon Technologies 로고
Infineon Technologies
SPI15N60CFD 데이터시트, 핀배열, 회로
CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
SPI15N60CFD
Product Summary
V DS @ Tjmax
R DS(on),max
ID
650 V
0.330
13.4 A
PG-TO262
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
TTyyppee
SSPPPI1155NN6600CCFFDD
PPaacckkaaggee
PPGG--TTOO222602
MMaarrkkiinngg
1155NN6600CCFFDD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=6.7 A, V DD=50 V
Avalanche energy, repetitive2),3)
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Avalanche
current,
repetitive2),3)
Drain source voltage slope
E AR
I AR
dv /dt
I D=13.4 A, V DD=50 V
I D=13.4 A,
V DS=480 V, T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I S=13.4 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
V GS static
AC (f >1 Hz)
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 & 3.5 screws
Value
13.4
8.4
33
460
0.8
13.4
80
40
600
±20
±30
156
-55 ... 150
60
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.0
page 1
2007-01-29


SPI15N60CFD 데이터시트, 핀배열, 회로
SPI15N60CFD
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature, wave
soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
Electrical characteristics, at T j=25 °C, unless otherwise specified
min.
Values
typ.
Unit
max.
- - 0.8 K/W
- - 62
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=13.4 A
600
-
V GS(th) V DS=V GS, I D=750 µA
3
-
700
4
-V
-
5
Zero gate voltage drain current
Gate-source leakage current
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Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
V GS=10 V, I D=9.4 A,
T j=150 °C
R G f =1 MHz, open drain
g fs
|V DS|>2|I D|R DS(on)max,
I D=9.4 A
-
-
-
-
-
-
-
1.4 - µA
1200
-
- 100 nA
0.28 0.33
0.78
1.3
8
-
-
-S
Rev. 1.0
page 2
2007-01-29




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SPI15N60CFD transistor

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SPI15N60CFD

CoolMOSTM Power Transistor - Infineon Technologies