PDF BC847BVC Data sheet ( Hoja de datos )

Número de pieza	BC847BVC
Descripción	NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Fabricantes	Diodes
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No Preview Available ! Features • Epitaxial Die Construction • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability BC847BVC NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.002 grams (approximate) C1 B2 E2 Top View Bottom View Maximum Ratings @TA = 25°C unless otherwise specified Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Characteristic E1 B1 C2 Device Schematic Symbol VCBO VCEO VEBO IC Value 50 45 6.0 100 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 —— V IE = 1μA, IC = 0 DC Current Gain (Note 5) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — — 100 300 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 5) VBE 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Emitter Cutoff Current (Note 5) ICBO ICBO — — 15 5.0 nA VCB = 30V µA VCB = 30V, TA = 150°C www.DGaatianSBhaenedtw4Uidt.hcoPmroduct fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Output Capacitance COBO — — 4.5 pF VCB = 10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = 5V, RS = 2.0kΩ, f = 1.0kHz, BW = 200Hz Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php 5. Short duration pulse test used to minimize self-heating effect. BC847BVC Document number: DS30638 Rev. 5 - 2 1 of 4 www.diodes.com April 2009 © Diodes Incorporated 1 page

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