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Número de pieza | BLF872 | |
Descripción | UHF power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF872 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
x Peak envelope power load power PL(PEP) = 300 W
x Gain Gp = 15 dB
x Drain efficiency ηD = 43 %
x Third order intermodulation distortion IMD3 = −28 dBc
s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
x Average output power PL(AV) = 70 W
x Gain Gp = 15 dB
x Drain efficiency ηD = 30 %
x Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center
frequency)
s Advanced flange material for optimum thermal behavior and reliability
s Excellent ruggedness
s High power gain
s Designed for broadband operation (UHF band)
s Excellent reliability
s Internal input and output matching for high gain and optimum broadband operation
s Source on underside eliminates DC isolators, reducing common-mode inductance
s Easy power control
www.DataSheet.in
1 page Philips Semiconductors
BLF872
UHF power LDMOS transistor
16
Gp
(dB)
14
12
Gp
ηD
ηadd
001aad744 60
ηD, ηadd
(%)
40
20
10 0
0 100 200 300 400
PL (W)
VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C.
Fig 2. CW power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of output power PL;
typical values
16
Gp
(dB)
14
Gp
IMD3
001aad745
0
IMD
(dBc)
−20
16
Gp
(dB)
14
Gp
ηD
ηadd
001aad746
60
ηD, ηadd
(%)
40
12 IMD5 −40 12
20
10
0
−60
50 100 150 200 250
PL(AV) (W)
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq = 2 × 0.9 A; Th = 25 °C.
Fig 3. 2-tone power gain Gp and intermodulation
distortion IMD as a function of average output
power PL(AV); typical values
10
0
0
50 100 150 200 250
PL(AV) (W)
Fig 4.
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq = 2 × 0.9 A; Th = 25 °C.
2-tone power gain Gp, drain efficiency ηD and
power added efficiency ηadd as a function of
average output power PL(AV); typical values
BLF872_1
Product data sheet
www.DataSheet.in
Rev. 01 — 20 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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80 mm
95 mm
Fig 11. Printed-circuit board for class-AB broadband test circuit
95 mm
001aad753
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet BLF872.PDF ] |
Número de pieza | Descripción | Fabricantes |
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