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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 12.5 VOLTS
• GOLD METALIZATION
• POUT = 20 W MINIMUM
• GP = 15 dB
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
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MS1227
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
Value
36
18
4.0
4.5
80
+200
-65 to +150
2.2
MS1227.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
A
W
°C
°C
° C/W
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MS1227
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVcbo
Bvces
Bvceo
Bvebo
Ices
HFE
IC = 50mA
IC = 50mA
IC = 50mA
IE = 5mA
VCB = 15V
VCE = 5V
IE = 0mA
VBE = 0V
IB = 0mA
IC = 0mA
IE = 0mA
IC = 1A
Min.
36
36
18
4.0
---
10
Value
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
5
200
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
POUT
GP
IMD
Cob
f = 30MHz
f = 30MHz
f = 30MHz
f = 1 MHz
Test Conditions
VCC = 12.5V
VCC = 12.5V
VCC = 12.5V
VCB = 30V
ICQ = 25mA
ICQ = 25mA
ICQ = 25mA
Min.
20
15
---
---
Value
Typ.
---
---
---
---
Max.
---
---
-30
135
Unit
W
dB
dB
pf
MS1227.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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