(PDF) MS1226 Datasheet - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1226
Descripción	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Microsemi
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • 30 MHz • 28 VOLTS • IMD = -28 dB • POUT = 30 WATTS • GP = 18 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. www.DataSheet4U.com MS1226 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance MSC0943.PDF 10-28-98 Value 65 36 4.0 4.5 80 +200 -65 to +150 2.2 Unit V V V A W °C °C ° C/W 1 page

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PDF MS1226 Data sheet ( Hoja de datos )