파트넘버.co.kr KC807 데이터시트 PDF


KC807 반도체 회로 부품 판매점

PNP Silicon AF Transistors



Guangdong Kexin Industrial 로고
Guangdong Kexin Industrial
KC807 데이터시트, 핀배열, 회로
SMD Type
www.DataSheet4U.com
Transistors
PNP Silicon AF Transistors
KC807(BC807)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Rating
-50
-45
-5
-800
310
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
2%
Symbol
Testconditons
VCBO IC = -10 A,VBE = 0
VCEO IC = -10 mA, IB = 0
VEBO IE = -10 A, IC = 0
ICES VCB = -25 V, VBE= 0
IEBO VEB = -4 V, IC = 0
IC = -100 mA, VCE = -1 V
hFE
IC = -300 mA, VCE = -1 V
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(on) VCE=-1V,IC=300mA
Cob VCB=-10V,f=1MHz
fT IC = -10 mA, VCE = -5 V, f = 50 MHz
Min Typ Max Unit
-50 V
-45 V
-5 V
-100
-100
nA
nA
100 630
60
-0.7 V
-1.2 V
12 pF
100 MHz
Marking
NO.
Marking
hFE
KC807-16
9FA
100 250
KC807-25
9FB
160 400
KC807-40
9FC
250 630
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KC807 transistor

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국내 전력반도체 판매점


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