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PDF BCX71JLT1G Data sheet ( Hoja de datos )
| Número de pieza | BCX71JLT1G | |
| Descripción | General Purpose Transistors PNP Silicon | |
| Fabricantes | ON Semiconductor | |
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BCX71JLT1G
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General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−45
−45
−5.0
−100
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD 350 mW
2.8 mW/°C
Storage Temperature
Thermal Resistance,
Junction-to-Ambient (Note 1)
Tstg
RqJA
150 °C
357 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
BJ M G
G
BJ = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BCX71JLT1G
SOT−23
(Pb−free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
1
Publication Order Number:
BCX71J/D
1 page  
BCX71JLT1G
TYPICAL DYNAMIC CHARACTERISTICS
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500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 13. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
50
20
VCE = -10 Vdc
10 f = 1.0 kHz
7.0
hfe ≈ 200
TA = 25°C
5.0 @ IC = −1.0 mA
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30
20
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
104
VCC = 30 V
103
102
ICEO
101 ICBO
AND
100 ICEX @ VBE(off) = 3.0 V
10-1
10-2
-4
0
-2
0
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Typical Collector Leakage Current
http://onsemi.com
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