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BC857CTT1 반도체 회로 부품 판매점

General Purpose Transistors PNP Silicon



ON Semiconductor 로고
ON Semiconductor
BC857CTT1 데이터시트, 핀배열, 회로
BC857BTT1, BC857CTT1
Preferred Devices
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 which is
designed for low power surface mount applications.
Features
Pb−Free Package is Available*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage
VCEO −45 V
Collector−Base Voltage
VCBO −50 V
Emitter−Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC −100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
200 mW
1.6 mW/°C
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
TJ, Tstg
−55 to
+150
°C
www.DataSheet4U.com
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416
STYLE 1
MARKING DIAGRAM
xxM
xx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 2
1
Publication Order Number:
BC857BTT1/D


BC857CTT1 데이터시트, 핀배열, 회로
BC857BTT1, BC857CTT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC857 Series
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC857B Only
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC857 Series
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC857 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC857B
BC857C
(IC = −2.0 mA, VCE = −5.0 V) BC857B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−45
−50
−50
−5.0
220
420
−0.6
100
www.DataSheet4U.com
Typ Max Unit
V
−−
V
−−
V
−−
V
−−
− −15 nA
−4.0
mA
150 −
270 −
290 475
520 800
− −0.3
− −0.65
−0.7
−0.9
− −0.75
− −0.82
V
V
V
− − MHz
− 4.5 pF
− 10 dB
http://onsemi.com
2




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BC857CTT1

General Purpose Transistors PNP Silicon - ON Semiconductor