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PDF BFU610F Data sheet ( Hoja de datos )
| Número de pieza | BFU610F | |
| Descripción | NPN Wideband Silicon Germanium RF Transistor | |
| Fabricantes | NXP Semiconductors | |
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BFU610F
www.DataSheet4U.com
NPN wideband silicon germanium RF transistor
Rev. 01 — 17 June 2010
Objective data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
40 GHz fT silicon germanium
technology
High associated gain 12 dB at 12 GHz
Low noise high gain microwave
transistor
Noise figure (NF) = 1.4 dB at 5.8 GHz
1.3 Applications
2nd LNA stage and mixer stage in
DBS LNB’s
Analog/digital cordless applications
Ka band oscillators DRO’s
Low noise amplifiers for microwave
communications systems
Satellite radio
WLAN and CDMA applications
1.4 Quick reference data
Table 1.
Symbol
CCBS
fT
Gp(max)
hFE
IC
Ptot
VCBO
VCEO
VEBO
Quick reference data
Parameter
Conditions
collector-base
capacitance
transition frequency
maximum power gain
DC current gain
collector current
VCB = 2 V; f = 1 MHz;
VBE = [tbd] V
VCE = 2 V; IC = 25 mA;
f = 2 GHz; Tamb = 25 °C
f = 5.8 GHz; IC = 8 mA;
VCE = 2 V; Tamb = 25 °C
VCE = 2 V; IC = 10 mA;
Tj = 25 °C
total power dissipation Tsp ≤ 90 °C; see Figure 1
collector-base voltage IE = 0 A
collector-emitter
voltage
IB = 0 A
emitter-base voltage IC = 0 A
Min Typ Max Unit
- 70 - fF
- 40 - GHz
[1] -
21 -
dB
70 140 270
- - 10 mA
[2] - - 50 mW
- - 10 V
- - 5V
- - 0.55 V
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
[2] Tsp is the temperature at the solder point of the emitter lead.
1 page  
NXP Semiconductors
www.DataSheet4U.com
BFU610F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Symbol
V(BR)CBO
V(BR)CEO
ICBO
hFE
CCBS
fT
Gp(max)
|s21|2
PL(1dB)
Characteristics
Parameter
Conditions
collector-base breakdown IE = 0 mA; IC = 2.5 µA; Tj = 25 °C
voltage
collector-emitter
breakdown voltage
IB = 0 mA; IC = 1 mA; Tj = 25 °C
collector-base cut-off
current
IE = 0 mA; VCB = 4.5 V; Tj = 25 °C
DC current gain
VCE = 2 V; IC = 10 mA; Tj = 25 °C
collector-base capacitance VCB = 2 V; f = 1 MHz; VBE = [tbd] V
transition frequency
VCE = 2 V; IC = 25 mA; f = 2 GHz;
Tamb = 25 °C
maximum power gain
f = 5.8 GHz; IC = 8 mA; VCE = 2 V;
Tamb = 25 °C
f = 1.8 GHz; IC = 8 mA; VCE = 2 V;
Tamb = 25 °C
f = 1.5 GHz; IC = 8 mA; VCE = 2 V;
Tamb = 25 °C
f = 2.4 GHz; IC = 8 mA; VCE = 2 V;
Tamb = 25 °C
f = 12 GHz; IC = 8 mA; VCE = 2 V;
Tamb = 25 °C
insertion power gain
IC = 8 mA; VCE = 2 V; f = 1.5 GHz;
Tamb = 25 °C
IC = 8 mA; VCE = 2 V; f = 1.8 GHz;
Tamb = 25 °C
IC = 8 mA; VCE = 2 V; f = 2.4 GHz;
Tamb = 25 °C
IC = 8 mA; VCE = 2 V; f = 5.8 GHz;
Tamb = 25 °C
IC = 8 mA; VCE = 2 V; f = 12 GHz;
Tamb = 25 °C
output power at 1 dB gain VCE = 2 V; f = 1.5 GHz; IC = 25 mA;
compression
ZL = 50 Ω; ZS = 50 Ω
VCE = 2 V; f = 2.4 GHz; IC = 25 mA;
ZL = 50 Ω; ZS = 50 Ω
VCE = 2 V; f = 1.8 GHz; IC = 25 mA;
ZL = 50 Ω; ZS = 50 Ω
VCE = 2 V; f = 5.8 GHz; IC = 25 mA;
ZL = 50 Ω; ZS = 50 Ω
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ Max Unit
10 - - V
5- - V
- - 100 nA
70 140 270
- 70 - fF
- 40 - GHz
[1] -
21 -
dB
[1] -
29 -
dB
[1] -
30.4 -
dB
[1] -
28 -
dB
[1] -
14.3 -
dB
- 19 - dB
- 18 - dB
- 17.5 - dB
- 13.4 - dB
- 7.7 - dB
- [tbd] - dBmW
- [tbd] - dBmW
- [tbd] - dBmW
- [tbd] - dBmW
BFU610F
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
www.DataSheet4U.com
BFU610F
NPN wideband silicon germanium RF transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU610F
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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