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PDF BLL6H1214-500 Data sheet ( Hoja de datos )
| Número de pieza | BLL6H1214-500 | |
| Descripción | LDMOS L-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
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BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
1.2 to 1.4 50 500
17 50
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %:
Output power = 500 W
Power gain = 17 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1 page  
NXP Semiconductors
BLL6H1214-500
www.DataSheet4U.com
LDMOS L-band radar power transistor
7.2 RF performance
7.2.1 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 25 °C
700
PL
(W)
600
001aak751
500
400
(1)
300 (2)
(3)
(4)
200 (5)
100
0
0 4 8 12 16
Pi (W)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
Fig 2. Output power as a function of input power;
typical values
20
Gp
(dB)
15
10
001aak752
(1)
(2)
(3)
(4)
(5)
5
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1250 MHz
(3) f = 1300 MHz
(4) f = 1350 MHz
(5) f = 1400 MHz
Fig 3. Power gain as a function of load power;
typical values
BLL6H1214-500_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
BLL6H1214-500
www.DataSheet4U.com
LDMOS L-band radar power transistor
7.2.6 Performance curves measured with δ = 20 %, tp = 500 μs and f = 1300 MHz
700
PL
(W)
600
500
400
001aal699
(1)
(2)
(3)
300
200
100
0
0 5 10 15 20 25
Pi (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 22. Output power as a function of input power;
typical values
20
Gp
(dB)
16
12
001aal700
(1)
(2)
(3)
8
4
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA;
f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 23. Power gain as a function of load power;
typical values
60
ηD
(%)
40
001aal701
(1)
(2)
(3)
20
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz.
(1) Ths = −40 °C
(2) Ths = 25 °C
(3) Ths = 65°C
Fig 24. Drain efficiency as a function of load power; typical values
BLL6H1214-500_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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