파트넘버.co.kr BLF6G27-75 데이터시트 PDF


BLF6G27-75 반도체 회로 부품 판매점

WiMAX power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF6G27-75 데이터시트, 핀배열, 회로
BLF6G27-75; BLF6G27LS-75www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) PL(M) Gp ηD
(MHz)
(V) (W) (W) (dB) (%)
1-carrier N-CDMA[1] 2500 to 2700 28 9
75 17 23
ACPR885k
(dBc)
50[2]
ACPR1980k
(dBc)
60[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an IDq of 600 mA:
N Average output power = 9 W
N Power gain = 17 dB
N Drain efficiency = 23 %
N ACPR885 = 50.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use


BLF6G27-75 데이터시트, 핀배열, 회로
NXP Semiconductors
BLF6G27-75; BLF6G27LS-75
www.DataSheet4U.com
WiMAX power LDMOS transistor
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G27-75 (SOT502A)
1 drain
2 gate
3 source
BLF6G27LS-75 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1] 3
2
2
3
sym112
1
[1] 3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G27-75
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF6G27LS-75 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
BLF6G27-75_6G27LS-75_1
Product data sheet
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Rev. 01 — 22 October 2009
Min Max Unit
- 65 V
0.5 +13 V
- 18 A
65 +150 °C
- 200 °C
© NXP B.V. 2009. All rights reserved.
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WiMAX power LDMOS transistor - NXP Semiconductors