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BLF6G27LS-135 반도체 회로 부품 판매점

WiMAX power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF6G27LS-135 데이터시트, 핀배열, 회로
BLF6G27-135; BLF6G27LS-135www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) PL(p) Gp ηD ACPR885k ACPR1980k
(MHz)
(V) (W) (W) (dB) (%) (dBc)
(dBc)
1-carrier N-CDMA[1] 2500 to 2700 32 20
200 16 22.5 52[2]
67[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA:
N Average output power = 20 W
N Power gain = 16 dB
N Drain efficiency = 22.5 %
N ACPR885k = 52.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range


BLF6G27LS-135 데이터시트, 핀배열, 회로
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
www.DataSheet4U.com
WiMAX power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G27-135 (SOT502A)
1 drain
2 gate
3 source
BLF6G27LS-135 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1] 3
2
2
3
sym112
1
[1] 3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
Version
BLF6G27-135 -
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLF6G27LS-135 -
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
65
+13
34
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
thermal resistance from Tcase = 80 °C;
junction to case
PL = 135 W (CW)
Rev. 02 — 26 May 2008
Type
BLF6G27-135
BLF6G27LS-135
Typ Unit
0.5 K/W
0.45 K/W
© NXP B.V. 2008. All rights reserved.
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WiMAX power LDMOS transistor - NXP Semiconductors