BLF6G27-10G 반도체 회로 부품 판매점
WiMAX power LDMOS transistor
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 NXP Semiconductors |
BLF6G27-10; BLF6G27-10Gwww.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 01 — 4 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp ηD ACPR885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA[1] 2500 to 2700 28 2
19 20 −49[2]
ACPR1980k
(dBc)
−64[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
I Qualified up to a maximum VDS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G27-10; BLF6G27-10G
www.DataSheet4U.com
WiMAX power LDMOS transistor
1.3 Applications
I RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G27-10 (SOT975B)
1 drain
2 gate
3 source
Simplified outline Graphic symbol
1
[1]
1
2
3
sym112
BLF6G27-10G (SOT975C)
1 drain
2 gate
3 source
2
1
[1]
2
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BLF6G27-10 -
earless flanged ceramic package; 2 leads
BLF6G27-10G -
earless flanged ceramic package; 2 leads
1
2
3
sym112
Version
SOT975B
SOT975C
BLF6G27-10_BLF6G27-10G_1
Product data sheet
Rev. 01 — 4 February 2009
© NXP B.V. 2009. All rights reserved.
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BLF6G27-10G transistor
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BLF6G27-10
WiMAX power LDMOS transistor - NXP Semiconductors
BLF6G27-10G
WiMAX power LDMOS transistor - NXP Semiconductors