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PDF KHB1D0N60I Data sheet ( Hoja de datos )
| Número de pieza | KHB1D0N60I | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KHB1D0N60I (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 1.0A
Drain-Source ON Resistance :
RDS(ON)=12 @VGS = 10V
Qg(typ.) = 5.9nC
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
www.DataSheet4U.com
A
C
K
Q
H
FF
123
D
I
J
DIM MILLIMETERS
A 6.6 +_ 0.2
B 6.1 +_0.2
C 5.34 +_ 0.3
D 0.7 +_0.2
B E 2.7 +_ 0.2
F 2.3 +_0.2
EM
P
H 0.96 MAX
I 2.3 +_ 0.1
J 0.5 +_ 0.1
OK
1.5
L 0.5 +_ 0.1
M 0.8 +_ 0.1
L O 0.55 MIN
P 1.02+_ 0.2
Q 0.8+_ 0.2
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
1.0 1.0*
0.57 0.57*
3.0 3.0*
50
2.8
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Ta=25
Derate above 25
PD
28
0.22
28 W
0.22 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
4.53
4.53 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
50
110
50 /W
110 /W
* : Drain current limited by maximum junction temperature.
DPAK
A
C
O
N
H
G
FF
123
I
J
D
B
K
E
M
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_ 0.2
B 6.1+_ 0.2
C 5.34+_0.3
D 0.7+_ 0.2
E 9.3 +_0.3
F 2.3 +_0.2
G 0.76+_ 0.1
H 0.96 MAX
I 2.3+_ 0.1
J 0.5+_ 0.1
K 1.8+_ 0.2
L 0.5 +_ 0.1
M 1.02 +_ 0.3
N 1.0 +_ 0.1
O 1.5
IPAK-S
D
G
2005. 10. 24
Revision No : 1
S
1/6
1 page  
KHB1D0N60D/I
- Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
www.DataSheet4U.com
0.8 x VDSS
1.0 mA
VGS
ID
VDS
Qgs Qgd
Qg
Q
- Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
- Resistive Load Switching
0.5 x VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
VDS(t)
Time
2005. 10. 24
Revision No : 1
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KHB1D0N60I.PDF ] | |
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