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SHANTOU HUASHAN ELECTRONIC DEVICES |
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HP50
APPLICATIONS
High Voltage And switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
www.DataSheet4U.com
VCBO Collector-Base Voltage
65~150
150
40W
500V
VCEO Collector-Emitter Voltage
400V
VEBO Emitter- Base Voltage
5V
IC Collector Current DC
1A
IC Collector Current Pulse
2A
IB Base Current
0.6A
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCEO Collector-Emitter Breakdown Voltage
ICEO Collector Cut-off Current
IEBO Emitter-Base Cutoff Current
ICES Collector Cut-off Current
HFE 1 DC Current Gain
HFE 2
HFE
VCE(sat) Collector- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
fT Current Gain-Bandwidth Product
TO-220
1 Base B
2 Collector C
3 Emitter, E
Max Unit
Test Conditions
IC=30mA, IB=0
VCE=300V, IB=0
VEB=5V, IC=0
VCE=500V, VEB=0
VCE=10V, IC=0.3A
VCE=10V, IC=1A
VCE=10V, IC=0.2A,f=1
IC=1A, IB=0.2A
VCE=10V, IC=1A
VCE=10V,IC=0.1A,f=2
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HP50
www.DataSheet4U.com
Figure 1 Power derating
Figure 2 Switching Time Equivalent Circuit
Figure 3 Turn-On Time
Figure 4 4Active Region Safe Operating Area
Figure 5 5Thermal Response
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