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Panasonic Semiconductor |
DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
400
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70 250
Transition frequency
fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.3 1.6
pF
Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
60 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 160
110 to 250
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00098CED
1
DataSheet.in
2SC0829
PC Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
12
Ta = 25°C
IB = 100 µA
10
80 µA
8
60 µA
6
40 µA
4
2 20 µA
0
0 4 8 12 16
Collector-emitter voltage VCE (V)
IC VBE
60
VCE = 10 V
50
40
25°C
30
Ta = 75°C
−25°C
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
IB VBE
120
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1 −25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200
25°C
150
−25°C
100
50
0
0.1 1 10 100
Collector current IC (mA)
fT IE
600
Ta = 25°C
500
400
300 VCB = 10 V
6V
200
100
0
− 0.1
−1
−10 −100
Emitter current IE (mA)
Zrb IE
80 f = 2 MHz
Ta = 25°C
70
60
50
40
30 VCB = 6 V
20 10 V
10
0
− 0.1
−1
Emitter current IE (mA)
−10
Cre VCE
2.4 IC = 1 mA
f = 10.7 MHz
2.0 Ta = 25°C
1.6
1.2
0.8
0.4
0
0.1 1 10 100
Collector-emitter voltage VCE (V)
2 SJC00098CED
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