파트넘버.co.kr 2SC0829 데이터시트 PDF


2SC0829 반도체 회로 부품 판매점

Silicon NPN epitaxial planar type



Panasonic Semiconductor 로고
Panasonic Semiconductor
2SC0829 데이터시트, 핀배열, 회로
DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
400
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70 250
Transition frequency
fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.3 1.6
pF
Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
60
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 160
110 to 250
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00098CED
1


2SC0829 데이터시트, 핀배열, 회로
DataSheet.in
2SC0829
PC Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
12
Ta = 25°C
IB = 100 µA
10
80 µA
8
60 µA
6
40 µA
4
2 20 µA
0
0 4 8 12 16
Collector-emitter voltage VCE (V)
IC VBE
60
VCE = 10 V
50
40
25°C
30
Ta = 75°C
25°C
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
IB VBE
120
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1 25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200
25°C
150
25°C
100
50
0
0.1 1 10 100
Collector current IC (mA)
fT IE
600
Ta = 25°C
500
400
300 VCB = 10 V
6V
200
100
0
0.1
1
10 100
Emitter current IE (mA)
Zrb IE
80 f = 2 MHz
Ta = 25°C
70
60
50
40
30 VCB = 6 V
20 10 V
10
0
0.1
1
Emitter current IE (mA)
10
Cre VCE
2.4 IC = 1 mA
f = 10.7 MHz
2.0 Ta = 25°C
1.6
1.2
0.8
0.4
0
0.1 1 10 100
Collector-emitter voltage VCE (V)
2 SJC00098CED




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Panasonic Semiconductor

( panasonic )

2SC0829 transistor

데이터시트 다운로드
:

[ 2SC0829.PDF ]

[ 2SC0829 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


2SC0829

Silicon NPN epitaxial planar type - Panasonic Semiconductor



2SC0829

Silicon NPN epitaxial planar type - Panasonic Semiconductor