BFP74F 반도체 회로 부품 판매점
NPN Silicon Germanium RF Transistor
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 Infineon Technologies AG |
NPN Silicon Germanium RF Transistor
www.DataBShFePet47U4.c0omF
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740F
Marking
Pin Configuration
R7s 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
TA > 0°C
TA ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 90°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
1TS is measured on the collector lead at the soldering point to the pcb
Value
4
3.5
13
13
1.2
30
3
160
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
2005-11-08
1
www.DataBShFePet47U4.c0omF
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 370
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 25 mA, VCE = 3 V, pulse measured
V(BR)CEO 4 4.7 - V
ICES
- - 30 µA
ICBO
- - 100 nA
IEBO
- - 3 µA
hFE 160 250 400 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2005-11-08
2
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제조업체: Infineon Technologies AG
( infineon )
BFP74F transistor
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[ BFP74F.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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