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STU408D 반도체 회로 부품 판매점

Dual N-Channel E nhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU408D 데이터시트, 핀배열, 회로
S amHop Microelectronics C orp.
www.DataSheet4U.com
S TU408D
J uly.25 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
30 @ VGS = 10V
40V 16A
40 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO252-4L package.
E S D P rotected.
D1/D2
D1 D2
G1 G2
S1
G1
S2 G2
TO-252-4L
S 1 N-ch
S 2 N-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 40
V
Gate-S ource Voltage
VGS 20
V
Drain C urrent-C ontinuous @ Ta
-P ulsed a
25 C
70 C
ID
IDM
16
13.8
50
A
A
A
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
IS
PD
TJ, TSTG
R JC
R JA
1
8
11
7.7
-55 to 175
13.6
120
A
W
C
C /W
C /W


STU408D 데이터시트, 핀배열, 회로
S TU408D
www.DataSheet4U.com
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
Total Gate Charge (10V)
tf
Qg
Total Gate Charge (4.5V)
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
VGS =0V, ID =250uA
VDS =32V, VGS =0V
VGS = 20V, VDS= 0V
VDS =VGS, ID = 250uA
VGS =10V, ID =8A
VGS = 4.5V, ID=6A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=8A
VDS =20V, VGS = 0V
f =1.0MHZ
VDD = 20V,
ID = 3A,
VGS = 10V,
R GEN = 3 ohm
VDS =20V, ID = 8A,
VGS =10V
Min Typ C Max Unit
40 V
1 uA
10 uA
1 1.8 3.0 V
22 30 m-ohm
30 40 m-ohm
10 A
15 S
735 PF
120 PF
70 PF
13 ns
15 ns
26 ns
10 ns
15 nC
7.2 nC
2.0 nC
3.8 nC
2




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STU408D transistor

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STU408D

Dual N-Channel E nhancement Mode Field Effect Transistor - SamHop Microelectronics