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KEC |
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D5N20P
KHB9D5N20F
UNIT
KHB9D5N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
30 V
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
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ID
IDP
EAS
EAR
dv/dt
9.5 9.5*
38 38*
180
8.7
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
87
0.7
40 W
0.32 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.44
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
3.13 /W
62.5 /W
D
G
2008. 12. 19
S
Revision No : 2
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D5N20P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB9D5N20F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D5N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
KHB9D5N20P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Drain Cut-off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
Vth VDS=VGS, ID=250 A
IDSS VDS=200V, VGS=0V,
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=4.75A
gFS VDS=40V, ID=4.75A (Note4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=160V, ID=9.5A
VGS=10V
(Note4, 5)
VDD=100V, RG=25
ID=9.5A
(Note4, 5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
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Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=9.5A, VGS=0V
trr IS=9.5A, VGS=0V,
Qrr dIs/dt=100A/ s
(Note 4)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 9.5A, dI/dt 300A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
200 - - V
- 0.19 - V/
2.0 - 4.0 V
--1 A
- - 100 nA
- 345 400 m
- 6.7 -
S
- 18.5 23
- 2.7 - nC
-9-
- 11 32
- 62 135
ns
- 46 102
- 80 170
- 387 503
- 96 125 pF
- 34 45
- - 9.5
A
- - 38
- - 1.5 V
- 130 -
ns
- 0.6 -
C
2008. 12. 19
Revision No : 2
2/7
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