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BLL6H1214L-250 반도체 회로 부품 판매점

LDMOS L-band Radar Power Transistor



NXP Semiconductors 로고
NXP Semiconductors
BLL6H1214L-250 데이터시트, 핀배열, 회로
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01 — 11 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp ηD
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55 15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
www.DataSheet4U.com
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
‹ Output power = 250 W
‹ Power gain = 17 dB
‹ Efficiency = 55 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1.2 GHz to 1.4 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)


BLL6H1214L-250 데이터시트, 핀배열, 회로
NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
1.3 Applications
„ L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2. Pinning
Pin Description
BLL6H1214L-250 (SOT502A)
1 drain
2 gate
3 source
BLL6H1214LS-250 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1] 3
2
2
3
sym112
1
[1] 3
2
1
2
3
sym112
www.DataSheet4U.com
Table 3. Ordering information
Type number
Package
Name Description
BLL6H1214L-250 -
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
BLL6H1214LS-250 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 100 V
0.5 +13 V
- 72 A
65 +150 °C
- 225 °C
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 11




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LDMOS L-band Radar Power Transistor - NXP Semiconductors