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NXP Semiconductors |
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01 — 11 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp ηD
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55 15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
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Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2. Pinning
Pin Description
BLL6H1214L-250 (SOT502A)
1 drain
2 gate
3 source
BLL6H1214LS-250 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
[1] 3
2
2
3
sym112
1
[1] 3
2
1
2
3
sym112
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Table 3. Ordering information
Type number
Package
Name Description
BLL6H1214L-250 -
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
BLL6H1214LS-250 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 100 V
−0.5 +13 V
- 72 A
−65 +150 °C
- 225 °C
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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