파트넘버.co.kr TK10A60D 데이터시트 PDF


TK10A60D 반도체 회로 부품 판매점

Field Effect Transistor



Toshiba 로고
Toshiba
TK10A60D 데이터시트, 핀배열, 회로
TK10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK10A60D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
www.DataShCeheatn4nUe.lctoemmperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
10
40
45
363
10
4.5
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
1
3
2009-09-29


TK10A60D 데이터시트, 핀배열, 회로
TK10A60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯ ⎯ ±1
IDSS
VDS = 600 V, VGS = 0 V
⎯ ⎯ 10
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 5 A
0.62 0.75
Yfs
VDS = 10 V, ID = 5 A
1.5 6.0
Ciss 1350
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
6
Coss
135
tr
10 V
VGS
ID = 5 A VOUT
22
0V
ton
50 Ω
RL =
40 Ω
55
tf 15
VDD ∼− 200 V
toff Duty 1%, tw = 10 μs
100
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
25
16 nC
9
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
www.DataShFeoerwt4aUrd.cvoomltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 40 A
⎯ ⎯ −1.7 V
1300
ns
12 ⎯ μC
Marking
K10A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29




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TK10A60D transistor

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