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PDF FJD3305H1 Data sheet ( Hoja de datos )
| Número de pieza | FJD3305H1 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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FJD3305H1
NPN Silicon Transistor
High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
April 2009
1 DPAK
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP Collector Current (Pulse)
IB Base Current
PC Collector Dissipation, Ta = 25°C
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Tc = 25°C
TJ Junction Temperature
TSTG
Storage Temperature
700
400
9
4
8
2
1.1
50
150
-65 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
Ordering Information
Part Number
FJD3305H1TM
Marking
J3305H1
Package
D-PAK
Value
110
2.0
Packing Method
Tape & Reel
Units
V
V
V
A
A
A
W
W
°C
°C
Units
°C/W
°C/W
Remarks
© 2009 Fairchild Semiconductor Corporation
FJD3305H1 Rev.A
1
www.fairchildsemi.com
1 page  
Mechanical Dimensions
D-PAK
www.DataSheet4U.com
© 2009 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A
5
Dimensions in Millimeters
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FJD3305H1.PDF ] | |
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