파트넘버.co.kr CH3906PT 데이터시트 PDF


CH3906PT 반도체 회로 부품 판매점

Switching Transistor



Chenmko Enterprise 로고
Chenmko Enterprise
CH3906PT 데이터시트, 핀배열, 회로
www.DataSheet4U.com
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
CH3906PT
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
CONSTRUCTION
* PNP Switching Transistor
MARKING
* S2A
CIRCUIT
3
1
2
SOT-23
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.045 (1.15)
.033 (0.85)
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
-40
-40
-5
-200
-200
-100
330
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2002-5


CH3906PT 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( CH3906PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IE = 0; VCB = - 30 V
IC = 0; VEB = 6 V
VCE = -1V; note 1
IC = -0.1mA
IC = -1mA
IC = -10 mA
IC = - 50 mA
IC = -100 mA
IC = -10 mA; IB = - 1 mA
IC = -50 mA; IB = - 5 mA
IC = -10 mA; IB = -1mA
IC = -50 mA; IB = - 5 mA
IE = ie = 0; VCB = - 5 V ; f = 1 MHz
IC = ic = 0; VEB = -500 mV;
f = 1 MHz
60
80
100
60
30
-650
fT transition frequency
IC = 10 mA; VCE = - 2 0 V ;
f = 100 MHz
250
F noise Þgure
IC = 100 µA; VCE = - 5 V; RS = 1 k ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = -10 mA; IBon = -1 mA;
IBoff = 1 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
-50
-50
UNIT
nA
nA
300
-250
-400
-850
-950
4.5
10
4
mV
mV
mV
mV
pF
pF
MHz
dB
65 ns
35 ns
35 ns
300 ns
225 ns
75 ns




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