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Chenmko Enterprise |
www.DataSheet4U.com
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
CH3904ZPT
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
CONSTRUCTION
* Two NPN transistors in one package.
MARKING
* ZIN
CIRCUIT
3
1
2
6.50+0.20
3.00+0.10
SC-73/SOT-223
1.65+0.15
0.90+0.05
2.0+0.3
0.70+0.10
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
0.9+0.2
0.27+0.05
0.01~0.10
13
1 Base
2
2 Emitter
3 Collector ( Heat Sink )
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
40
6
200
200
100
2.0
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
2004-07
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( CH3904ZPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IE = 0; VCB = 30 V
IC = 0; VEB = 6 V
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
fT transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
F noise Þgure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
MIN.
−
−
60
80
100
60
30
−
−
650
−
−
−
300
−
−
−
−
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
UNIT
nA
nA
−
−
300
−
−
200 mV
300 mV
850 mV
950 mV
4 pF
8 pF
− MHz
5 dB
65 ns
35 ns
35 ns
240 ns
200 ns
50 ns
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