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Número de pieza BLF6G21-10G
Descripción Power LDMOS Transistor
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BLF6G21-10G
Power LDMOS transistor
Rev. 01 — 11 May 2009
Objective data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1. Typical performance
IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS
PL(AV)
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.3 31
ACPR
(dBc)
50[1]
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
N Average output power = 0.7 W
N Gain = 18.5 dB
N Efficiency = 15 %
N ACPR = 50 dBc
I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
N Average output power = 2 W
N Gain = 19.3 dB
N Efficiency = 31 %
N ACPR = 39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency

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BLF6G21-10G pdf
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BLF6G21-10G
Power LDMOS transistor
9. Abbreviations
Table 9. Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
DPCH
Dedicated Physical CHannel
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
PHS
Personal Handy-phone System
RF Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 10. Revision history
Document ID
Release date
BLF6G21-10G_1
20090511
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
BLF6G21-10G_1
Objective data sheet
Rev. 01 — 11 May 2009
© NXP B.V. 2009. All rights reserved.
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