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PDF BLF6G27S-45 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G27S-45 | |
| Descripción | WiMAX power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 03 — 15 December 2008
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp ηD ACPR885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA[1] 2500 to 2700 28 7
18 24 −49[2]
ACPR1980k
(dBc)
−64[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 350 mA:
I Qualified up to a maximum VDS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page  
www.DNatXaSPheSete4Um.coicmonductors
BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.3 Two-tone
19.5
Gp
(dB)
18.5
(5)
(4)
(3)
17.5
(2)
(1)
001aah408
−15
IMD3
(dBc)
−25
−35
−45
−55
001aah409
(1)
(2)
(5)
(3)
(4)
16.5
1
10 102
PL(PEP) (W)
VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz;
2.5 MHz tone spacing.
(1) IDq = 250 mA
(2) IDq = 300 mA
(3) IDq = 350 mA
(4) IDq = 400 mA
(5) IDq = 500 mA
Fig 3. Power gain as function of peak envelope load
power; typical values
−65
1
10 102
PL(PEP) (W)
VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz;
2.5 MHz tone spacing.
(1) IDq = 250 mA
(2) IDq = 300 mA
(3) IDq = 350 mA
(4) IDq = 400 mA
(5) IDq = 500 mA
Fig 4.
Third order intermodulation distortion as
function of peak envelope load power; typical
values
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Rev. 03 — 15 December 2008
© NXP B.V. 2008. All rights reserved.
5 of 16
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BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Table 9.
f
(GHz)
2.50
2.55
2.60
2.65
2.70
Measured test circuit impedances
Zi
(Ω)
11.1 − j11.0
10.6 − j10.8
10.1 − j10.5
9.6 − j10.2
9.1 − j9.8
Zo
(Ω)
18.4 − j9.1
16.9 − j9.2
15.6 − j9.2
14.4 − j9.1
13.3 − j8.9
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Rev. 03 — 15 December 2008
© NXP B.V. 2008. All rights reserved.
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