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BLF6G20-180PN
Power LDMOS transistor
Rev. 03 — 30 March 2009
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
32
50
18
29.5
ACPR
(dBc)
−35[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an IDq of 1600 mA:
N Average output power = 50 W
N Power gain = 18 dB (typ)
N Efficiency = 29.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Qualified up to a supply voltage of 32 V
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
www.DNatXaSPheSete4Um.coicmonductors
BLF6G20-180PN
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
4
5
2
sym117
Table 3. Ordering information
Type number Package
Name Description
BLF6G20-180PN -
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Version
SOT539A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VGS
Tstg
Tcase
Tj
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
Min Max Unit
- 65 V
−0.5 +13 V
−65 +150 °C
- 150 °C
- 225 °C
BLF6G20-180PN_3
Product data sheet
Rev. 03 — 30 March 2009
© NXP B.V. 2009. All rights reserved.
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