|
SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX87C
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·Complement to type BDX88C
·DARLINGTON
APPLICATIONS
·Designed for use in power linear and
switching application.
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Max. operating Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
100
100
5
12
18
0.2
120
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.45
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA
VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA
VBEsat
Base-emitter saturation voltage
IC=12A ;IB=120mA
VBE Base-emitter on voltage
IC=6A ; VCE=3V
hFE-1
DC current gain
IC=5A ; VCE=3V
hFE-2
DC current gain
IC=6A ; VCE=3V
hFE-3
ICBO
ICEO
IEBO
VF-1
VF-2
DC current gain
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Diode forward voltage
Diode forward voltage
IC=12A ; VCE=3V
VCB=100V; IE=0
TC=150
VCE=50V; IB=0
VEB=5V; IC=0
IF=3A
IF=8A
Product Specification
BDX87C
MIN TYP. MAX UNIT
100 V
2.0 V
3.0 V
4.0 V
2.8 V
1000
750 18000
100
0.5
5.0
mA
1.0 mA
1.0 mA
1.8 V
2.5 V
2
|