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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX64C
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·DARLINGTON
·Complement to type BDX65C
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
-120
-120
-5
-12
-16
-0.2
117
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
MAX
1.5
UNIT
/W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX64C
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-20mA
VBE Base-emitter on voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IC=-5A;VCE=-3V
VCB=-120V; IE=0
TC=150
VCE=-60V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
VF Diode forward voltage
IF=-5A
hFE-1
DC current gain
IC=-1A ; VCE=-3V
hFE-2
DC current gain
IC=-5A ; VCE=-3V
hFE-3
DC current gain
IC=-12A ; VCE=-3V
fT Transition frequency
IC=-5A ; VCE=-3V;f=1MHz
MIN TYP. MAX UNIT
-120
V
-2 V
-2.5 V
-0.2
-2
mA
-1 mA
-5 mA
-1.8 V
1500
1000
750
7 MHz
2
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