|
SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX36
DESCRIPTION
www.data·sWheietht4uT.cOom-126 package
·High current (Max: 5A)
APPLICATIONS
·High current switching in power
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb075
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
120
60
5
5
10
2
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
5
UNIT
K/W
K/W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX36
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A
VBEsat-1 Base-emitter saturation voltage
IC=5A; IB=0.5A
VBEsat-2 Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
IC=10A; IB=1A
VCB=100V; IE=0
Tj=100
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=10V
CC Collector capacitance
IE=0;VCB=10V ;f=1MHz
fT Transition frequency
IC=0.5A; VCE=5V ;f=100MHz
Switching times
ton Turn-on time
toff turn-off time
ICon=1A;IBon=-IBoff=0.1A
ICon=2A;IBon=-IBoff=0.2A
ICon=5A;IBon=-IBoff=0.5A
ICon=1A;IBon=-IBoff=0.1A
ICon=2A;IBon=-IBoff=0.2A
ICon=5A;IBon=-IBoff=0.5A
MIN TYP. MAX UNIT
0.9 V
2.0 V
1.7 V
2.5 V
0.1
10
µA
0.1 µA
45 450
40 pF
100 MHz
60 100
80 ns
180 300
600 800
450 700 ns
350 500
2
|