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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDV64/64A/64B/64C
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BDV65/65A/65B/65C
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in general purpose amplifier
applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDV64
VCBO
Collector-base voltage
BDV64A
BDV64B
BDV64C
BDV64
VCEO
Collector-emitter voltage
BDV64A
BDV64B
BDV64C
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-12
-15
-0.5
125
3.5
150
-65~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDV64/64A/64B/64C
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BDV64
V(BR)CEO
Collector-emitter
breakdown voltage
BDV64A
BDV64B
IC=-30mA, IB=0
BDV64C
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VEC
Collector-emitter saturation voltage IC=-5A ,IB=-20mA
Base-emitter on voltage
BDV64
Collector
cut-off current
BDV64A
BDV64B
BDV64C
BDV64
IC=-5A ; VCE=-4V
VCB=-60V, IE=0
VCB=-30V, IE=0;TC=150
VCB=-80V, IE=0
VCB=-40V, IE=0;TC=150
VCB=-100V, IE=0
VCB=-50V, IE=0;TC=150
VCB=-120V, IE=0
VCB=-60V, IE=0;TC=150
VCE=-30V, IB=0
Collector
cut-off current
BDV64A
BDV64B
VCE=-40V, IB=0
VCE=-50V, IB=0
BDV64C VCE=-60V, IB=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-5A ; VCE=-4V
Diode forward voltage
IE=-10A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN
-60
-80
-100
-120
TYP.
MAX UNIT
V
-2.0 V
-2.5 V
-0.4
-2.0
-0.4
-2.0 mA
-0.4
-2.0
-0.4
-2.0
-2 mA
1000
-5 mA
-3.5 V
MAX
1.0
UNIT
/W
2
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